2SD2027 transistor equivalent, power transistor.
*Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SB1346
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICA.
Image gallery
TAGS
Download (Size : 209.36KB)